Kong Yuechan,: шукати на сайті Z-Library

Рік:

2013

Мова:

english

Файл:

PDF, 1019 KB

english, 2013

[IEEE 2015 12th IEEE International Conference on Electronic Measurement & Instruments (ICEMI) - Qingdao, China (2015.7.16-2015.7.18)] 2015 12th IEEE International Conference on Electronic Measurement & Instruments (ICEMI) - 220GHz on-wafer measurement based on TRL calibration method

Lu Haiyan,, Cheng Wei,, Zhou Zhijiang,, Zhou Jianjun,, Wang Yuan,, Kong Yuechan,, Chen Tangshen,

Рік:

2015

Мова:

english

Файл:

PDF, 1.50 MB

english, 2015

High-performance enhancement-mode Al 2 O 3 /InAlGaN/GaN MOS high-electron mobility transistors with a self-aligned gate recessing technology

Zhang, Kai, Kong, Cen, Zhou, Jianjun, Kong, Yuechan, Chen, Tangsheng

Журнал:

Applied Physics Express

Рік:

2017

Мова:

english

Файл:

PDF, 774 KB

english, 2017

High frequency H-diamond MISFET with output power density of 182 mW/mm at 10 GHz

Yu, Xinxin, Zhou, Jianjun, Zhang, Song, Cao, Zhengyi, Kong, Yuechan, Chen, Tangsheng

Журнал:

Рік:

2019

Мова:

english

Файл:

PDF, 1.89 MB

english, 2019

[IEEE 2010 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - Chengdu, China (2010.05.8-2010.05.11)] 2010 International Conference on Microwave and Millimeter Wave Technology - Simulation of polarization pinning effect in PZT/AlGaN/GaN metal-ferroelectric-semiconductor heterostructure

Kong, Yuechan, Zhou, Jianjun, Xue, Fangshi, Li, Liang, Chen, Chen, Luo, Wenbo, Zeng, Huizhong, Zhu, Jun

Рік:

2010

Мова:

english

Файл:

PDF, 126 KB

english, 2010

Monolithic Integration of E/D-Mode AlGaN/GaN MIS-HEMTs

Kong, Yuechan, Zhou, Jianjun, Kong, Cen, Zhang, Youtao, Dong, Xun, Lu, Haiyan, Chen, Tangsheng, Yang, Naibin

Журнал:

Рік:

2014

Мова:

english

Файл:

PDF, 1.03 MB

english, 2014

Substitution of Paraelectric for Conventional Dielectric in AlGaN/GaN MISFETs

Yuechan Kong,, Fangshi Xue,, Jianjun Zhou,, Liang Li,, Chen Chen,, Yanrong Li,

Журнал:

Рік:

2010

Мова:

english

Файл:

PDF, 415 KB

english, 2010

Polarization and interface charge coupling in ferroelectric/AlGaN/GaN heterostructure

Zhang, Min, Kong, Yuechan, Zhou, Jianjun, Xue, Fangshi, Li, Liang, Jiang, Wenhai, Hao, Lanzhong, Luo, Wenbo, Zeng, Huizhong

Журнал:

Semiconductor Science and Technology

Рік:

2012

Мова:

english

Файл:

PDF, 745 KB

english, 2012

Improvement of breakdown and current collapse characteristics of GaN HEMT with a polarization-graded AlGaN buffer

Li, Chuanhao, Li, Zhonghui, Peng, Daqing, Ni, Jinyu, Pan, Lei, Zhang, Dongguo, Dong, Xun, Kong, Yuechan

Журнал:

Рік:

2015

Мова:

english

Файл:

PDF, 1.16 MB

english, 2015

Research on the diamond MISFET

Zhou, Jianjun, Bai, Song, Kong, Cen, Geng, Xijiao, Lu, Haiyan, Kong, Yuechan, Chen, Tangsheng

Журнал:

Рік:

2013

Мова:

english

Файл:

PDF, 183 KB

english, 2013

[IEEE 2015 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2015.4.19-2015.4.23)] 2015 IEEE International Reliability Physics Symposium - PBTI and HCI degradations of ultrathin body InGaAs-On-Insulator nMOSFETs fabricated by wafer bonding

Tang, Xiaoyu, Lu, J., Zhang, Rui, Zhao, Yi, Wu, Wangran, Liu, Chang, Shi, Yi, Huang, Ziqian, Kong, Yuechan

Рік:

2015

Мова:

english

Файл:

PDF, 907 KB

english, 2015

[IEEE 2014 3rd Asia-Pacific Conference on Antennas and Propagation - Harbin, China (2014.7.26-2014.7.29)] Proceedings of 2014 3rd Asia-Pacific Conference on Antennas and Propagation - Low insertion loss GHz GaN SAW device fabricated on self-standing GaN substrate

Zhou, Jianjun, Li, Liang, Lu, Haiyan, Kong, Cen, Kong, Yuechan, Chen, Tangsheng, Chen, Chen, Wang, Xiaoyu, Wu, Haodong

Рік:

2014

Мова:

english

Файл:

PDF, 2.44 MB

english, 2014

[IEEE 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Chengdu, China (2014.6.18-2014.6.20)] 2014 IEEE International Conference on Electron Devices and Solid-State Circuits - Monolithically integrated E/D mode MIS GaN HEMTs and inverters on Si substrate

Cen Kong,, Jianjun Zhou,, Yuechan Kong,, Jinyu Ni,, Tangsheng Chen,

Рік:

2014

Мова:

english

Файл:

PDF, 503 KB

english, 2014

Low Interface Trap Densities and Enhanced Performance of AlGaN/GaN MOS High- Electron Mobility Transistors Using Thermal Oxidized Y2O3 Interlayer

Liao, Chongnan, Zou, Xuming, Huang, Chun-Wei, Wang, Jingli, Zhang, Kai, Kong, Yuechan, Chen, Tangsheng, Wu, Wen-Wei, Xiao, Xiangheng, Jiang, Changzhong, Liao, Lei

Журнал:

Рік:

2015

Мова:

english

Файл:

PDF, 966 KB

english, 2015

Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al 2 O 3 as gate insulator

Wang, Zheli, Zhou, Jianjun, Kong, Yuechan, Kong, Cen, Dong, Xun, Yang, Yang, Chen, Tangsheng

Журнал:

physica status solidi (a)

Рік:

2015

Мова:

english

Файл:

PDF, 308 KB

english, 2015

[IEEE 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Chengdu, China (2014.6.18-2014.6.20)] 2014 IEEE International Conference on Electron Devices and Solid-State Circuits - Observation of polarization pinning effect in PZT/AlGaN/GaN heterostructure

Kong, Yuechan, Zhou, Jianjun, Tangsheng Chen,, Wenbo Luo,, Lanzhong Hao,, Huizhong Zeng,

Рік:

2014

Мова:

english

Файл:

PDF, 352 KB

english, 2014

[IEEE 2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - Shenzhen, China (2012.05.5-2012.05.8)] 2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - Two-terminal electroluminescence of AlGaN/GaN high electron mobility transistors

Kong, Yuechan, Ren, Chunjiang, Dong, Xun, Zhou, Jianjun, Xue, Fangshi, Chen, Tangsheng, Li, Liang

Рік:

2012

Мова:

english

Файл:

PDF, 1.03 MB

english, 2012

[IEEE 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Chengdu, China (2014.6.18-2014.6.20)] 2014 IEEE International Conference on Electron Devices and Solid-State Circuits - A 0.15µm gate InAlN/GaN HEMT with thin barrier layer

Zhou, Jianjun, Dong, Xun, Haiyn Lu,, Kong, Ceng, Kong, Yuechan, Chen, Tangsheng, Chen, Chen

Рік:

2014

Мова:

english

Файл:

PDF, 469 KB

english, 2014

[IEEE 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. - Beijing, China (Oct. 18-21, 2004)] Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. - Influence of relaxation on the two-dimensional electron-gas in AI/sub x/Ga/sub 1-x/N/GaN/Al/sub y/Ga/sub 1-y/N double heterostructure with compressively strained GaN layer

Yuechan Kong,, Youdou Zheng,, Chunhong Zhou,, Shulin Gu,, Bo Shen,, Rong Zhang,, Yi Shi,, Ping Han,, Ruolian Jiang,

Рік:

2004

Мова:

english

Файл:

PDF, 919 KB

english, 2004

[IEEE 2015 IEEE International Conference on Communication Problem-Solving (ICCP) - Guilin, China (2015.10.16-2015.10.18)] 2015 IEEE International Conference on Communication Problem-Solving (ICCP) - Modeling techniques for graphene field-effect transistors

Haiyan Lu,, Yun Wu,, Shuai Huo,, Yuehang Xu,, Yuechan Kong,, Tangshen Chen,

Рік:

2015

Мова:

english

Файл:

PDF, 614 KB

english, 2015

Integrated enhancement/depletion-mode GaN MIS-HEMTs for high-speed mixed-signal applications

Gao, Tao, Xu, Ruimin, Kong, Yuechan, Zhou, Jianjun, Zhang, Kai, Kong, Cen, Peng, Daqing, Chen, Tangsheng

Журнал:

Рік:

2016

Мова:

english

Файл:

PDF, 603 KB

english, 2016

200 GHz Maximum Oscillation Frequency in CVD Graphene Radio Frequency Transistors

Wu, Yun, Zou, Xuming, Sun, Menglong, Cao, Zhengyi, Wang, Xinran, Huo, Shuai, Zhou, Jianjun, Yang, Yang, Yu, Xinxin, Kong, Yuechan, Yu, Guanghui, Liao, Lei, Chen, Tangsheng

Журнал:

ACS Applied Materials & Interfaces

Рік:

2016

Мова:

english

Файл:

PDF, 3.04 MB

english, 2016

Thermal simulation of high power GaN-on-diamond substrates for HEMT applications

Guo, Huaixin, Kong, Yuechan, Chen, Tangsheng

Журнал:

Diamond and Related Materials

Рік:

2016

Мова:

english

Файл:

PDF, 1.74 MB

english, 2016

Dual-gate AlGaN/GaN MIS-HEMTs using Si 3 N 4 as the gate dielectric

Gao, Tao, Xu, Ruimin, Zhang, Kai, Kong, Yuechan, Zhou, Jianjun, Kong, Cen, Dong, Xun, Chen, Tangsheng, Hao, Yue

Журнал:

Semiconductor Science and Technology

Рік:

2015

Мова:

english

Файл:

PDF, 924 KB

english, 2015

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

Gao, Tao, Xu, Ruimin, Kong, Yuechan, Zhou, Jianjun, Kong, Cen, Dong, Xun, Chen, Tangsheng

Журнал:

Рік:

2015

Мова:

english

Файл:

PDF, 457 KB

english, 2015

[IEEE 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Hong Kong, Hong Kong (2016.8.3-2016.8.5)] 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Measurement and modeling techniques for InP-based HBT devices to 220GHz

Lu, Haiyan, Cheng, Wei, Zhou, Zhijiang, Li, Oupeng, Niu, Bin, Kong, Yuechan, Chen, Tangsheng

Рік:

2016

Файл:

PDF, 501 KB

2016

Design, fabrication and characterising of 100 W GaN HEMT for Ku-band application

Ren, Chunjiang, Zhong, Shichang, Li, Yuchao, Li, Zhonghui, Kong, Yuechan, Chen, Tangsheng

Журнал:

Рік:

2016

Мова:

english

Файл:

PDF, 1.03 MB

english, 2016

[IEEE 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - Beijing, China (2016.11.15-2016.11.17)] 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - Enhancement-mode Al2O3/InAlGaN/GaN MOS-HEMTs with a record drain current density of 1.7 A/mm and a threshold voltage of +1.5 V

Zhang, Kai, Zhou, Jianjun, Kong, Cen, Kong, Yuechan, Chen, Tangsheng

Рік:

2016

Мова:

english

Файл:

PDF, 2.25 MB

english, 2016

High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer

Tao, Gao, Ruimin, Xu, Kai, Zhang, Yuechan, Kong, Jianjun, Zhou, Cen, Kong, Xinxin, Yu, Xun, Dong, Tangsheng, Chen

Журнал:

Рік:

2016

Мова:

english

Файл:

PDF, 1.04 MB

english, 2016

[IEEE 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Hong Kong, Hong Kong (2016.8.3-2016.8.5)] 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - High power performance AlGaN/GaN HEMT with 0.1 μm Y-shaped gate encapsulated with low-κ BCB

Yu, Xinxin, Zhou, Jianjun, Kong, Yuechan, Peng, Daqing, Wang, Weibo, Guo, Fangjin, Lu, Haiyan, Wang, Wen, Kong, Cen, Li, Zhonghui, Chen, Tangsheng

Рік:

2016

Файл:

PDF, 239 KB

2016

[IEEE 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - Beijing, China (2016.11.15-2016.11.17)] 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - High performance ultra-thin quaternary InAlGaN barrier HEMTs with fT > 260 GHz

Zhu, Guangrun, Zhang, Kai, Yu, Xinxin, Kong, Yuechan, Chen, Tangsheng

Рік:

2016

Мова:

english

Файл:

PDF, 2.33 MB

english, 2016

High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications

Zhang, Kai, Kong, Yuechan, Zhu, Guangrun, Zhou, Jianjun, Yu, Xinxin, Kong, Cen, Li, Zhonghui, Chen, Tangsheng

Журнал:

IEEE Transactions on Electron Devices

Рік:

2017

Мова:

english

Файл:

PDF, 466 KB

english, 2017

Positive Shift in Threshold Voltage Induced by CuO and NiOₓ Gate in AlGaN/GaN HEMTs

Li, Yi, Guo, Yaxiong, Zhang, Kai, Zou, Xuming, Wang, Jingli, Kong, Yuechan, Chen, Tangsheng, Jiang, Changzhong, Fang, Guojia, Liu, Chuansheng, Liao, Lei

Журнал:

Рік:

2017

Мова:

english

Файл:

PDF, 874 KB

english, 2017

3-inch GaN-on-diamond HEMTs with device-first transfer technology

Tingting, Liu, Yuechan, Kong, Lishu, Wu, Huaixin, Guo, Jianjun, Zhou, Cen, Kong, Tangsheng, Chen

Журнал:

ECS Journal of Solid State Science and Technology

Рік:

2017

Мова:

english

Файл:

PDF, 458 KB

english, 2017

Quaternary InAlGaN barrier high-electron-mobility transistors with f max > 400 GHz

Zhu, Guangrun, Zhang, Kai, Kong, Yuechan, Li, Chuanhao, Lu, Haiyan, Yu, Xinxin, Li, Zhonghui, Chen, Tangsheng

Журнал:

Applied Physics Express

Рік:

2017

Мова:

english

Файл:

PDF, 1.35 MB

english, 2017

Performance Comparison of GaN HEMTs on Diamond and SiC Substrates Based on Surface Potential Model

Wu, Qingzhi, Xu, Yuehang, Zhou, Jianjun, Kong, Yuechan, Chen, Tangsheng, Wang, Yan, Lin, Fujiang, Fu, Yu, Jia, Yonghao, Zhao, Xiaodong, Yan, Bo, Xu, Ruimin

Журнал:

Рік:

2017

Мова:

english

Файл:

PDF, 1.38 MB

english, 2017

[IEEE 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - Beijing, China (2017.11.1-2017.11.3)] 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - Enhancement-mode GaN HEMT power electronic device with low specific on resistance

Cen, Kong, Jianjun, Zhou, Yuechan, Kong, Kai, Zhang, Tangsheng, Chen

Рік:

2017

Мова:

english

Файл:

PDF, 286 KB

english, 2017

[IEEE 2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS) - Haining, Hangzhou, China (2017.12.14-2017.12.16)] 2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS) - Physical-based simulation of DC characteristics of hydrogen-terminated diamond MOSFETs

Fu, Yu, Xu, Yuehang, Xu, Ruimin, Zhou, Jianjun, Kong, Yuechan

Рік:

2017

Мова:

english

Файл:

PDF, 301 KB

english, 2017

A 16 GS/s 3-Bit DAC Core in GaN HEMT Technology

Kong, Yuechan, Zhang, Min, Zhou, Jianjun, Zhang, Youtao, Zhang, Kai, Peng, Daqing, Li, Chuanhao

Журнал:

physica status solidi (a)

Рік:

2018

Мова:

english

Файл:

PDF, 1.65 MB

english, 2018

Improvement of Power Performance of GaN HEMT by Using Quaternary InAlGaN Barrier

Wang, Wen, Yu, Xinxin, Zhou, Jianjun, Chen, Dunjun, Zhang, Kai, Kong, Cen, Kong, Yuechan, Li, Zhonghui, Chen, Tangsheng

Журнал:

IEEE Journal of the Electron Devices Society

Рік:

2018

Мова:

english

Файл:

PDF, 976 KB

english, 2018

[IEEE 2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS) - Haining (2017.12.14-2017.12.16)] 2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS) - Heterogenous integration of III-V MMIC and Si CMOS

Wu, Lishu, Kong, Yuechan, Cheng, Wei, Zhang, Youtao, Chen, Tangsheng

Рік:

2017

Файл:

PDF, 259 KB

2017

Characterization and Modeling of Hydrogen-Terminated MOSFETs with Single-crystal and Polycrystalline Diamond

Fu, Yu, Xu, Ruimin, Xu, Yuehang, Zhou, Jianjun, Wu, Qingzhi, Kong, Yuechan, Zhang, Yong, Chen, Tangsheng, Yan, Bo

Журнал: